Product Information

SCT10N120

SCT10N120 electronic component of STMicroelectronics

Datasheet
MOSFET Silicon carbide Power MOSFET 1200 V, 10 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.8841 ea
Line Total: USD 9.88

5170 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5170 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

SCT10N120
STMicroelectronics

1 : USD 6.4703
10 : USD 5.4697
25 : USD 5.3602
100 : USD 5.3602
600 : USD 5.3602

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

SCT10N120 Datasheet Silicon carbide Power MOSFET 1200 V, 12 A, 520 m (typ., T = 150 C) in an HiP247 package J Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (T = 200 C) J Very fast and robust intrinsic body diode Low capacitance 3 2 1 Applications HiP247 Solar inverters, UPS D(2, TAB) Motor drives High voltage DC-DC converters Switch mode power supplies G(1) Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. S(3) The outstanding thermal properties of the SiC material, combined with the devices AM01475v1 noZen housing in the proprietary HiP247 package, allows designers to use an industry- standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT10N120 Product summary Order code SCT10N120 Marking SCT10N120 Package HiP247 Packing Tube The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as halogen-free. DS10954 - Rev 3 - March 2018 www.st.com For further information contact your local STMicroelectronics sales office.SCT10N120 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 1200 V DS V Gate-source voltage -10 to 25 V GS I Drain current (continuous) at T = 25 C 12 A D C I Drain current (continuous) at T = 100 C 10 A D C (1) I Drain current (pulsed) 24 A DM P Total dissipation at T = 25 C 150 W TOT C T Storage temperature range C stg -55 to 200 T Operating junction temperature range C j 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.17 C/W thj-case R Thermal resistance junction-ambient max 40 C/W thj-amb DS10954 - Rev 3 page 2/13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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