Product Information

STD180N4F6

STD180N4F6 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power MOSFET in a DPAK package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.78 ea
Line Total: USD 1950

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500

Stock Image

STD180N4F6
STMicroelectronics

2500 : USD 0.78

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STD180N4F6
STMicroelectronics

1 : USD 6.3041
10 : USD 2.2759
25 : USD 2.1477
100 : USD 1.8272
500 : USD 1.5066
1000 : USD 1.2501
2500 : USD 1.2394

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

STD180N4F6 N-channel 40 V, 2.5 m typ., 80 A STripFET F6 Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code V R max. I P DS DS(on) D TOT STD180N4F6 40 V 2.8 m 80 A 130 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications Switching applications Power tools Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. Table 1: Device summary Order code Marking Package Packing STD180N4F6 180N4F6 DPAK Tape and reel July 2016 DocID028602 Rev 2 1/16 www.st.com This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STD180N4F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK package information ............................................................. 10 4.2 DPAK packing information .............................................................. 13 5 Revision history ............................................................................ 15 2/16 DocID028602 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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