Product Information

STL7N6F7

STL7N6F7 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 60 V, 0.019 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.2884 ea
Line Total: USD 865.2

5820 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
5820 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

STL7N6F7
STMicroelectronics

3000 : USD 0.2795
6000 : USD 0.2795
9000 : USD 0.2795
12000 : USD 0.2795
15000 : USD 0.2795

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Series
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

STL7N6F7 N-channel 60 V, 21 m typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package Datasheet - production data Features 1 Order code V R max I DS DS(on) D 2 3 STL7N6F7 60 V 25 m 7 A 6 1 Among the lowest R on the market DS(on) 5 2 4 Excellent FoM (figure of merit) 3 Low C /C ratio for EMI immunity rss iss High avalanche ruggedness PowerFLAT 2x2 Applications Switching applications Figure 1: Internal schematic diagram Description 1(D) 2(D) 3(G) This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more D efficient switching. S 6(D) 5(D) 4(S) Bottom view AM11269v1 Table 1: Device summary Order code Marking Package Packing STL7N6F7 ST7N PowerFLAT 2x2 Tape and reel April 2017 DocID028257 Rev 3 1/13 www.st.com This is information on a product in full production. Contents STL7N6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 2x2 package information ............................................. 10 5 Revision history ............................................................................ 12 2/13 DocID028257 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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