Product Information

STL8DN6LF3

STL8DN6LF3 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET Dual N-Ch 60V 7.8A 22.5mOhm STripFETIII
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.8546 ea
Line Total: USD 3.85

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1

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STL8DN6LF3
STMicroelectronics

1 : USD 3.8546
10 : USD 1.4506
100 : USD 1.0843
500 : USD 0.8923
1000 : USD 0.7043
3000 : USD 0.6565

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qualification
Tradename
Configuration
Series
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Transistor Type
Cnhts
Hts Code
Mxhts
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Taric
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Additional Infomation About Product

STL8DN6LF3 Datasheet Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 double island package Features V R max. I Order code DS DS(on) D STL8DN6LF3 60 V 30 m 7.8 A AEC-Q101 qualified Logic level V GS(th) 175 C maximum junction temperature 100% avalanche rated Wettable flank package Applications Drain on rear side Switching applications 1 S2 8 D2 Description 2 G2 7 This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide 3 S1 6 superior switching performance. D1 5 4 G1 NG14G22D1D2RSS13S21 Product status link STL8DN6LF3 Product summary Order code STL8DN6LF3 Marking 8DN6LF3 PowerFLAT 5x6 Package double island Packing Tape and reel DS8667 - Rev 7 - March 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL8DN6LF3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 20 V GS V Drain-source voltage 60 V DS (1) I Drain current (continuous) at T = 25 C 20 A C D I Drain current (continuous) at T = 100 C 20 A D C Drain current (continuous) at T = 25 C 7.8 A pcb (2) I D Drain current (continuous) at T = 100 C 5.5 A pcb (2)(3) I Drain current (pulsed) 31.2 A DM P Total power dissipation at T = 25 C 65 W TOT C (2) P Total power dissipation at T = 25 C 4.3 W TOT pcb I Non-repetitive avalanche current 7.8 A AV (4) E Single pulse avalanche energy 190 mJ AS T Storage temperature range C stg -55 to 175 T Operating junction temperature range C J 1. Current is limited by bonding, with R = 2.3 C/W the chip is able to carry 30 A at 25 C. thJC 2. When mounted on an 1 inch 2 Oz. Cu board, t < 10 s. 3. Pulse width is limited by safe operating area. 4. Starting T = 25 C, I = I , V = 25 V. J D AS DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.3 thj-case C/W (1) R Thermal resistance junction-pcb 35 thj-pcb 1. When mounted on an 1 inch 2 Oz. Cu board, t < 10 s. DS8667 - Rev 7 page 2/15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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