Product Information

STL8N6LF6AG

STL8N6LF6AG electronic component of STMicroelectronics

Datasheet
MOSFET Automotive-grade dual N-channel 60 V, 27 mO typ., 20 A STripFET II Power MOSFET in a PowerFLAT 5x6 double island package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.6253 ea
Line Total: USD 1875.9

2910 - Global Stock
Ships to you between
Thu. 09 May to Wed. 15 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
2910 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 3000
Multiples : 3000

Stock Image

STL8N6LF6AG
STMicroelectronics

3000 : USD 0.6253

97 - WHS 2


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 12
Multiples : 1

Stock Image

STL8N6LF6AG
STMicroelectronics

12 : USD 0.6944

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STL8N6LF6AG Automotive-grade N-channel 60 V, 21 m typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL8N6LF6AG 60 V 27 m 32 A 55 W Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Wettable flank package Figure 1: Internal schematic diagram Applications Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STL8N6LF6AG 8N6LF6 PowerFLAT 5x6 Tape and reel January 2016 DocID028068 Rev 2 1/14 www.st.com This is information on a product in full production. Contents STL8N6LF6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 4.1 PowerFLAT 5x6 WF type R package information .......................... 8 4.2 PowerFLAT 5x6 WF packing information .................................... 11 5 Revision history ............................................................................ 13 2/14 DocID028068 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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