Product Information

STL90N10F7

STL90N10F7 electronic component of STMicroelectronics

Datasheet
MOSFET N-CH 100V 0.009Ohm 16A STripFET VII
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6506 ea
Line Total: USD 0.65

10109 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
8730 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3000
Multiples : 3000

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STL90N10F7
STMicroelectronics

3000 : USD 1.1666

2882 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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STL90N10F7
STMicroelectronics

1 : USD 1.3354
10 : USD 1.3236
25 : USD 1.3119
100 : USD 1.3002
250 : USD 1.2742
500 : USD 1.2742
1000 : USD 1.2742

10089 - WHS 3


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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STL90N10F7
STMicroelectronics

1 : USD 0.6306
10 : USD 0.558
30 : USD 0.5218
100 : USD 0.4855
500 : USD 0.4633
1000 : USD 0.4533

8730 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3000
Multiples : 3000

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STL90N10F7
STMicroelectronics

3000 : USD 1.1666

2880 - WHS 5


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 31
Multiples : 1

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STL90N10F7
STMicroelectronics

31 : USD 1.2845
50 : USD 1.2652

2882 - WHS 6


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 7
Multiples : 1

Stock Image

STL90N10F7
STMicroelectronics

7 : USD 1.3354
10 : USD 1.3236
25 : USD 1.3119
100 : USD 1.3002
250 : USD 1.2742

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

STL90N10F7 Datasheet N-channel 100 V, 7 m typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features V R max. I P Order code DS DS(on) D TOT STL90N10F7 100 V 8 m 70 A 100 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss PowerFLAT 5x6 High avalanche ruggedness D(5, 6, 7, 8) 8 7 6 5 Applications Switching applications G(4) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced 1 2 3 4 trench gate structure that results in very low on-state resistance, while also reducing Top View S(1, 2, 3) internal capacitance and gate charge for faster and more efficient switching. AM15540v2 Product status link STL90N10F7 Product summary Order code STL90N10F7 Marking 90N10F7 Package PowerFLAT 5x6 Packing Tape and reel DS9621 - Rev 7 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL90N10F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 100 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 70 A C (1) I D Drain current (continuous) at T = 100 C 50 A C Drain current (continuous) at T = 25 C 16 A pcb (2) I D Drain current (continuous) at T = 100 C 11 A pcb (1)(3) I Drain current (pulsed) 280 A DM (2)(3) I Drain current (pulsed) 64 A DM (1) P Total power dissipation at T = 25 C 100 W TOT C (2) P Total power dissipation at T = 25 C pcb 5 W TOT (4) E Single pulse avalanche energy 300 mJ AS T Storage temperature range C stg - 55 to 175 T Operating junction temperature range C J 1. This value is rated according to R . thj-c 2. This value is rated according to R . thj-pcb 3. Pulse width is limited by safe operating area. 4. Starting T = 25 C, I = 10 A, V = 50 V. J D DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.5 thj-case C/W (1) R Thermal resistance junction-pcb 31 thj-pcb 1. When mounted on 1 inch, 2 Oz. Cu FR-4 board. DS9621 - Rev 7 page 2/16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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