Product Information

STL9N65M2

STL9N65M2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000

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STL9N65M2
STMicroelectronics

3000 : USD 0.7238
9000 : USD 0.7121
24000 : USD 0.6898
45000 : USD 0.6689
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vds - Drain-Source Breakdown Voltage
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Brand
Product
Series
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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10 11 STL9N65M2 Datasheet N-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 HV package Features 6 7 5 V R max. I Order code DS DS(on ) D STL9N65M2 650 V 1.00 4.5 A 4 Extremely low gate charge Excellent output capacitance (C ) profile OSS 1 12 100% avalanche tested PowerFLAT 5x5 HV Zener-protected Applications G S S S Switching applications D(5, 6, 11, 12) 10 9 8 7 D 11 6 D Description G(10) D 12 5 D This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device 1 2 3 4 exhibits low on-resistance and optimized switching characteristics, rendering it S(2, 3, 4, 7, 8, 9) NC S S S suitable for the most demanding high efficiency converters. Pin 1 Top View identification GIPG260120150916ALS Product status link STL9N65M2 Product summary Order code STL9N65M2 Marking 9N65M2 Package PowerFLAT 5x5 HV Packing Tape and reel DS13058 - Rev 1 - July 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL9N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 4.5 A C I D Drain current (continuous) at T = 100 C 2.8 A C (1) I Drain current pulsed 12 A DM P Total power dissipation at T = 25 C 46 W TOT C I Avalanche current, repetitive or non-repetitive (pulse width limited by T max) 0.9 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 95 mJ AS J D AR DD (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width is limited by safe operating area. 2. I 4.5 A, di/dt 400 A/s, V V , V = 400 V. SD DS(peak) (BR)DSS DD 3. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.7 C/W thj-case (1) R Thermal resistance junction-pcb 58.5 C/W thj-pcb 1. When mounted on 1 inch FR-4 board, 2 oz Cu. DS13058 - Rev 1 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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