Product Information

STL8P4LLF6

STL8P4LLF6 electronic component of STMicroelectronics

Datasheet
MOSFET P-channel 40 V, 0.0175 Ohm typ., 8 A STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9636 ea
Line Total: USD 0.96

2361 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2361 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STL8P4LLF6
STMicroelectronics

1 : USD 0.9636
10 : USD 0.9539
25 : USD 0.8319
100 : USD 0.5981
250 : USD 0.5862
500 : USD 0.5862
1000 : USD 0.5862

2361 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 13
Multiples : 1

Stock Image

STL8P4LLF6
STMicroelectronics

13 : USD 0.9539
25 : USD 0.8319
100 : USD 0.5981
250 : USD 0.5862

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Height
Length
Product
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STL8P4LLF6 P-channel 40 V, 0.0175 typ.,8 A, STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL8P4LLF6 40 V 0.0205 8 A 2.9 W 1 2 Very low on-resistance 3 4 Very low gate charge High avalanche ruggedness Low gate drive power loss PowerFLAT 3.3x3.3 Applications Switching applications Figure 1: Internal schematic diagram Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. Table 1: Device summary Order code Marking Package Packaging STL8P4LLF6 8P4F6 PowerFLAT 3.3 x 3.3 Tape and reel March 2015 DocID025617 Rev 2 1/14 www.st.com This is information on a product in full production. Contents STL8P4LLF6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 3.3x3.3 package information .................................... 10 5 Revision history ............................................................................ 13 2/14 DocID025617 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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