Product Information

STL86N3LLH6AG

STL86N3LLH6AG electronic component of STMicroelectronics

Datasheet
MOSFET Automotive-grade N-channel 30 V, 0.004 Ohm typ., 80 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.584 ea
Line Total: USD 3.58

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 1
Multiples : 1

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STL86N3LLH6AG
STMicroelectronics

1 : USD 1.1784

0 - WHS 2


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

STL86N3LLH6AG
STMicroelectronics

1 : USD 3.584
10 : USD 1.3347
100 : USD 1.1101
500 : USD 1.0391
1000 : USD 0.9211
3000 : USD 0.9071
6000 : USD 0.9071
9000 : USD 0.8729
24000 : USD 0.8386

0 - WHS 3


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 15
Multiples : 1

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STL86N3LLH6AG
STMicroelectronics

15 : USD 1.1123

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STL86N3LLH6AG Datasheet Automotive-grade N-channel 30 V, 4 m typ., 80 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package Features V R max. I Order code DS DS(on) D STL86N3LLH6AG 30 V 5.2 m 80 A 4 3 2 1 AEC-Q101 qualified Very low on-resistance PowerFLAT 5x6 Very low gate charge High avalanche ruggedness D(5, 6, 7, 8) 8 7 6 5 Low gate drive power loss Logic level Wettable flank package G(4) Applications Switching applications 1 2 3 4 Top View S(1, 2, 3) AM15540v2 Description This device is an N-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all packages. DS(on) Product status link STL86N3LLH6AG Product summary Order code STL86N3LLH6AG Marking 86N3LLH6 Package PowerFLAT 5x6 Packing Tape and reel DS10615 - Rev 5 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL86N3LLH6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 30 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C 80 A D C (1) I Drain current (continuous) at T = 70 C 60 A C D (1) I Drain current (continuous) at T = 100 C 51 A D C (2) (1) I , Drain current (pulsed) 320 A DM (3) I Drain current (continuous) at T = 25 C 21 A D pcb (3) I Drain current (continuous) at T = 70 C 15.7 A pcb D (3) I Drain current (continuous) at T = 100 C 13.1 A D pcb (2) (3) I , Drain current (pulsed) 84 A DM (1) Total power dissipation at T = 25 C P 60 TOT C W (3) P Total power dissipation at T = 25 C 4 pcb TOT T Storage temperature range stg - 55 to 150 C T Operating junction temperature range j 1. The value is rated according to R . thj-c. 2. Pulse width limited by safe operating area. 3. The value is rated according to R . thj-pcb. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.08 thj-case C/W (1) R Thermal resistance junction-pcb 31.3 thj-pcb 1. When mounted on FR-4 board of 1 inch, 2oz Cu, t < 10 s DS10615 - Rev 5 page 2/17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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