Product Information

STL8DN10LF3

STL8DN10LF3 electronic component of STMicroelectronics

Datasheet
MOSFET Dual N-Ch 100V 7.8A 25mOhm STripFET III

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.7254 ea
Line Total: USD 2176.2

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

STL8DN10LF3
STMicroelectronics

3000 : USD 2.133
6000 : USD 2.1137
9000 : USD 2.0943
12000 : USD 2.0748
15000 : USD 2.0554
24000 : USD 2.0359
30000 : USD 2.0164
75000 : USD 1.9968
150000 : USD 1.9772

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STL8DN10LF3
STMicroelectronics

1 : USD 5.7699
10 : USD 2.0836
25 : USD 1.9661
100 : USD 1.6775
500 : USD 1.3783
1000 : USD 1.1433
3000 : USD 1.1326

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 99
Multiples : 99

Stock Image

STL8DN10LF3
STMicroelectronics

99 : USD 0.8343

0 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

STL8DN10LF3
STMicroelectronics

3000 : USD 0.7961

0 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

STL8DN10LF3
STMicroelectronics

3000 : USD 0.7254
21000 : USD 0.6824

0 - WHS 6


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 106
Multiples : 1

Stock Image

STL8DN10LF3
STMicroelectronics

106 : USD 0.9022
250 : USD 0.8313
500 : USD 0.8014

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Channel Mode
Qualification
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STL8DN10LF3 Automotive-grade dual N-channel 100 V, 25 m typ., 7.8 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 DI Datasheet - production data Features Order code V R max. DS DS(on) ID STL8DN10LF3 100 V 35 m 7.8 A Designed for automotive applications and AEC-Q101 qualified Logic level VGS(th) 175 C maximum junction temperature 100% avalanche rated Wettable flank package Applications Switching applications Description This device is an N-channel Power MOSFET Figure 1: Internal schematic diagram developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Table 1: Device summary Order code Marking Package Packing TM STL8DN10LF3 8DN10LF3 PowerFLAT 5x6 double island Tape and reel June 2016 DocID023009 Rev 8 1/15 www.st.com This is information on a product in full production. Contents STL8DN10LF3 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 5x6 double island package information ..................... 9 4.2 Packing information ......................................................................... 12 5 Revision history ............................................................................ 14 2/15 DocID023009 Rev 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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