Product Information

ZXMN10A08E6TC

ZXMN10A08E6TC electronic component of Diodes Incorporated

Datasheet
MOSFET 100V N-Chnl UMOS
Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.3161 ea
Line Total: USD 3161

0 - Global Stock
MOQ: 10000  Multiples: 10000
Pack Size: 10000

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 10000
Multiples : 10000

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ZXMN10A08E6TC
Diodes Incorporated

10000 : USD 0.3375

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 10000
Multiples : 10000

Stock Image

ZXMN10A08E6TC
Diodes Incorporated

10000 : USD 0.3141

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Max I D Low On-Resistance V Max R (BR)DSS DS(on) T = 25C A Fast Switching Speed (Note 5) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 250m V = 10V 1.9A GS Halogen and Antimony Free. Green Device (Note 3) 100V 300m V = 6V 1.68A GS Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: SOT26 This MOSFET features a unique structure, combining the benefits of Case Material: Molded Plastic, Green Molding Compound. low on-resistance and fast switching, making it ideal for high- UL Flammability Classification Rating 94V-0 efficiency, power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC - DC Converters Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.015 grams (Approximate) Disconnect Switches Motor Control SOT26 Top View Pinout Top-view Device symbol Ordering Information (Note 4) Part Number Reel Size (inch) Tape Width (mm) Quantity Per Reel ZXMN10A08E6TA 7 8 3000 ZXMN10A08E6TC 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMN10A08E6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 100 V V DSS Gate-Source Voltage V V 20 GS Note 5) 1.9 1.5 T =+70C (Note 5) A Continuous Drain Current A V = 10V I GS D (Note 4) 1.5 (Note 7) 3.5 Pulsed Drain Current (Note 6) 8.6 A I DM Continuous Source Current (Body Diode) (Note 5) 2.5 A I S Pulsed Source Current (Body Diode) (Note 6) I 8.6 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 4) 1.1 Power Dissipation (Note 5) P 1.7 W D (Note 7) 6.3 (Note 4) 114 Thermal Resistance, Junction to Ambient R C/W JA (Note 5) 73.5 Thermal Resistance, Junction to Leads (Note 7) 19.7 C/W R JL Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 5. For a device surface mounted on FR4 PCB measured at t 5 sec. 6. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). Thermal Characteristics 10 1.2 R DS(on) 1.0 Limited 1 0.8 DC 0.6 1s 100m 100ms 0.4 10ms 1ms Single Pulse 0.2 10m 100s T =25C amb 0.0 100m 1 10 100 0 20 40 60 80 100 120 140 160 V Drain-Source Voltage (V) Temperature (C) DS Safe Operating Area Derating Curve 120 T =25C amb 100 Single Pulse 100 T =25C amb 80 D=0.5 60 10 40 D=0.2 Single Pulse 20 D=0.05 1 D=0.1 100 1m 10m 100m 1 10 100 1k 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 2 of 7 ZXMN10A08E6 March 2015 Diodes Incorporated www.diodes.com Datasheet Number: DS31909 Rev. 9 2 NEW PRODUCT Thermal Resistance (C/W) I Drain Current (A) C Maximum Power (W) Max Power Dissipation (W)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Diodes Incorporated may also be referenced as

DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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