Product Information

STE139N65M5

STE139N65M5 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh M5 Power MOSFET in a ISOTOP package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 10
Multiples : 10

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STE139N65M5
STMicroelectronics

10 : USD 28.389
30 : USD 27.2535
40 : USD 27.2535
100 : USD 27.2535
150 : USD 27.2535
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

STE139N65M5
STMicroelectronics

1 : USD 39.7658
5 : USD 39.36
10 : USD 38.0117
25 : USD 36.3101
100 : USD 34.7524
250 : USD 33.1556
500 : USD 32.6713
1000 : USD 30.1712
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

STE139N65M5 N-channel 650 V, 0.014 typ., 130 A, MDmesh V Power MOSFET in a ISOTOP package Datasheet - preliminary data Features Order code V T R max I DS jmax DS(on) D STE139N65M5 710 V 0.017 W 130 A Very low R DS(on) Higher V rating DSS Higher dv/dt capability Excellent switching performance ISOTOP 100% avalanche tested Applications Figure 1. Internal schematic diagram Switching applications Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known * PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially 6 suitable for applications which require superior power density and outstanding efficiency. 0 Y Table 1. Device summary Order code Marking Packages Packaging STE139N65M5 139N65M5 ISOTOP Tube August 2013 DocID025117 Rev 1 1/13 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com change without notice. Contents STE139N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID025117 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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