Product Information

SCT20N120

SCT20N120 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; 175W; HIP247™
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.6218 ea
Line Total: USD 9.62

3 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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SCT20N120
STMicroelectronics

1 : USD 9.6218

323 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3
Multiples : 1

Stock Image

SCT20N120
STMicroelectronics

3 : USD 12.285
5 : USD 12.285
25 : USD 12.285
100 : USD 12.285
250 : USD 12.285

Read More Specifications

     
Manufacturer
Product Category
Technology
Polarisation
Mounting
Kind Of Package
Case
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Gate Charge
Power Dissipation
Brand Category
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Additional Infomation About Product

SCT20N120 Datasheet Silicon carbide Power MOSFET 1200 V, 20 A, 189 m (typ., T = 150 C) in an HiP247 package J Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (T = 200 C) J Very fast and robust intrinsic body diode Low capacitance 3 2 1 Applications HiP247 Solar inverters, UPS Motor drives D(2, TAB) High voltage DC-DC converters Switch mode power supplies G(1) Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per S(3) unit area and very good switching performance almost independent of temperature. AM01475v1 noZen The outstanding thermal properties of the SiC material, combined with the devices housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N120 Product summary Order code SCT20N120 Marking SCT20N120 Package HiP247 Packing Tube DS10360 - Rev 5 - September 2019 www.st.com For further information contact your local STMicroelectronics sales office.SCT20N120 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 1200 V DS V Gate-source voltage -10 to 25 V GS I Drain current (continuous) at T = 25 C 20 A D C I Drain current (continuous) at T = 100 C 16 A D C (1) I Drain current (pulsed) 45 A DM P Total power dissipation at T = 25 C 175 W TOT C T Storage temperature range C stg -55 to 200 T Operating junction temperature range C j 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case 1 C/W R Thermal resistance junction-ambient 40 C/W thj-amb DS10360 - Rev 5 page 2/13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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