Product Information

SCT50N120

SCT50N120 electronic component of STMicroelectronics

Datasheet
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 48.737 ea
Line Total: USD 48.74

46 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
46 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

SCT50N120
STMicroelectronics

1 : USD 48.737
3 : USD 46.865

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

The SCT50N120 with MOSFET Silicon Carbide Power MOSFET, 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) is a Silicon Carbide Power MOSFET designed and manufactured by STMicroelectronics. This device is rated for 1200 Volts, with a current capability of up to 65 Amps. It has a low on-resistance of 59 mOhms (typ. TJ = 150 C), and is housed in a HiP247 package for added thermal and electrical performance. This Power MOSFET is also designed for low on-state power losses through its fast switching capability, allowing high system efficiency. Furthermore, this product is optimized for excellent thermal behavior, allowing it to handle larger currents and voltages.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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