Product Information

SD2931-12MR

SD2931-12MR electronic component of STMicroelectronics

Datasheet
RF MOSFET Transistors 150W-50V MoistResist HF/VHF DMOS TRANSIS
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 43.0043 ea
Line Total: USD 43

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 50
Multiples : 1

Stock Image

SD2931-12MR
STMicroelectronics

50 : USD 94.263
100 : USD 93.314
250 : USD 92.378
500 : USD 91.455
1000 : USD 90.545
2500 : USD 89.635
3000 : USD 88.738
5000 : USD 88.062

0 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

SD2931-12MR
STMicroelectronics

1 : USD 66.7455
10 : USD 64.1254
50 : USD 63.6801

0 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

SD2931-12MR
STMicroelectronics

1 : USD 43.0043

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Pd - Power Dissipation
Packaging
Pin Count
Operating Temp Range
Rad Hardened
Mounting
Channel Mode
Channel Type
Screening Level
Number Of Elements
Drain Efficiency Typ
Drain Source Voltage Max
Input Capacitance Typ Vds
Output Capacitance Typ Vds
Power Gain Typ Vds
Frequency Max
Reverse Capacitance Typ
Application
LoadingGif

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Additional Infomation About Product

SD2931-12MR Datasheet 150 W 50 V moisture resistant HF/VHF DMOS transistor Features Gold metallization Excellent thermal stability Common source push-pull configuration P = 150 W min. with 14 dB gain 175 MHz OUT M174MR epoxy sealed Thermally enhanced packing for lower junction temperatures G and V sort marked on unit FS GS Moisture resistant package specifically designed to operate in extreme environments 4 1 1. Drain 2. Source Description 3. Gate The SD2931-12MR is a gold metallized N-channel MOS field-effect RF power 4. Source 3 2 transistor. Electrically identical to the standard SD2931 MOSFET, it is used for 50 V DC large signal applications up to 230 MHz. The device is mechanically compatible with the SD2931 but offers better thermal capability (25% lower thermal resistance), representing the best-in-class in transistors for ISM applications, where reliability and ruggedness are critical factors. The SD2931-12MR benefits from the latest generation of environmentally designed packing, ruggedized against cyclic high moisture operation and severe storage conditions. Product status SD2931-12MR Product summary Order code SD2931-12MR Marking SD2931-11MR Package M174 Packing Plastic tray DS9247 - Rev 4 - February 2018 www.st.com/ For further information contact your local STMicroelectronics sales office.SD2931-12MR Electrical data 1 Electrical data 1.1 Maximum ratings T = 25 C CASE Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain source voltage 125 V (BR)DSS V Drain-gate voltage (R = 1 M) 125 V DGR GS V Gate-source voltage 40 V GS I Drain current 20 A D P Power dissipation 389 W DISS T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG 1.2 Thermal data Table 2. Thermal data Symbol Parameter Value Unit R Junction-to-case thermal resistance 0.45 C/W thJC DS9247 - Rev 4 page 2/16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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