SD57045

SD57045 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P = 45W WITH 13 dB gain 945 MHz OUT BeO FREE PACKAGE M243 epoxy sealed DESCRIPTION ORDER CODE BRANDING SD57045 SD57045 The SD57045 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 PIN CONNECTION GHz. The SD57045 is designed for high gain and broadband performance operating in common 1 source mode at 28 V. It is ideal for base station applications requiring high linearity. 3 2 1. Drain 3. Source 2. Gate ABSOLUTE MAXIMUM RATINGS (T = 25C) CASE Symbol Parameter Value Unit V Drain-Source Voltage 65 V (BR)DSS V Drain-Gate Voltage (R = 1 M) 65 V DGR GS V Gate-Source Voltage 20 V GS I Drain Current 5 A D P Power Dissipation ( Tc = 70C) 93 W DISS Tj Max. Operating Junction Temperature 200 C T Storage Temperature -65 to + 200 C STG THERMAL DATA R Junction -Case Thermal Resistance 1.4 C/W th(j-c) November, 19 2002 1/11SD57045 ELECTRICAL SPECIFICATION (T = 25C) CASE STATIC Symbol Test Conditions Min. Typ. Max. Unit V V = 0 V I = 1 mA 65 V (BR)DSS GS DS I V = 0 V V = 28 V 1 A DSS GS DS I V = 20 V V = 0 V 1 A GSS GS DS V V = 28 V I = 250 mA 2.5 5.0 V GS(Q) DS D V V = 10 V I = 3 A 0.7 0.9 V DS(ON) GS D G V = 10 V I = 5 A 2.0 2.7 mho FS DS D C V = 0 V V = 28 V f = 1 MHz 80 pF ISS GS DS C V = 0 V V = 28 V f = 1 MHz 40 pF OSS GS DS C V = 0 V V = 28 V f = 1 MHz 3.2 pF RSS GS DS Ref. 7133620B DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P V = 28 V I = 250 mA f = 945 MHz 45 W OUT DD DQ IMD3 V = 28 V I = 250 mA P = 45 W PEP -32 -28 dBc DD DQ OUT G V = 28 V I = 250 mA P = 45 W PEP 13 15 dB PS DD DQ OUT V = 28 V I = 250 mA P = 45 W PEP 33 40 % D DD DQ OUT Load V = 28 V I = 250 mA P = 45 W f = 945 MHz DD DQ OUT 10:1 VSWR mismatch ALL PHASE ANGLES note: f1 = 945 MHz PEP f = 945.1 MHz 2 IMPEDANCE DATA D Z D Typical Typical Drain Input G Zin S FREQ. Z ()Z () IN DL 925 MHz 1.27 + j 0.82 2.22 -j 1.63 930 MHz 1.21 + j 0.79 2.24 - j 1.61 945 MHz 1.04 + j 0.71 2.30 - j 1.52 960 MHz 0.93 + j 0.43 2.37 - j 1.37 965 MHz 0.91 + j 0.41 2.43 - j 1.36 2/11