SD57060-10

SD57060 RF power transistor the LdmoST family Features Excellent thermal stability Common source configuration P = 60W with 13dB gain 945MHz OUT BeO free package In compliance with the 2002/95/EC european directive Description M243 Epoxy sealed The SD57060 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to Figure 1. Pin connection 1.0 GHz. The SD57060 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity. 1 3 2 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding SD57060 M243 SD57060 August 2007 Rev 7 1/16 www.st.com 16Contents SD57060 Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 3 Impedance . 5 4 Typical performance . 6 5 Common source s-parameter . 9 5.1 SD57060 (VDS = 13.5V IDS = 2A) . 9 5.2 SD57060 (VDS = 28V IDS = 2A) . 10 6 Test circuit 11 7 Text circuit layout 13 8 Package mechanical data 14 9 Revision history . 16 2/16