Product Information

SD4931

SD4931 electronic component of STMicroelectronics

Datasheet
Trans RF MOSFET N-CH 200V 20A 4-Pin Case M-174 Tray

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 61.6367 ea
Line Total: USD 61.64

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

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SD4931
STMicroelectronics

1 : USD 75.0455

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Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

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SD4931
STMicroelectronics

1 : USD 89.8218
5 : USD 88.1725
10 : USD 86.5867
25 : USD 83.7068

0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

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SD4931
STMicroelectronics

1 : USD 114.6763

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Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

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SD4931
STMicroelectronics

1 : USD 70.7791
2 : USD 66.111
3 : USD 64.5218
5 : USD 63.2314

0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

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SD4931
STMicroelectronics

1 : USD 61.6367
2 : USD 57.5718
3 : USD 56.1877
5 : USD 55.064

     
Manufacturer
Product Category
Id - Continuous Drain Current
Output Power
Pd - Power Dissipation
Packaging
Mounting
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Channel Type
Screening Level
Rad Hardened
Vswr Max
Application
Frequency Max
Forward Transconductance Typ
Input Capacitance Typ Vds
Output Capacitance Typ Vds
Power Gain Typ Vds
Drain Efficiency Typ
Reverse Capacitance Typ
Drain Source Voltage Max
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SD4931 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features Improved ruggedness V > 200 V (BR)DSS Excellent thermal stability 20:1 all phases load mismatch capability P = 150 W min. with 14.8 dB gain OUT 175 MHz In compliance with the 2002/95/EC European directive M174 Epoxy sealed Description The SD4931 is an N-channel MOS field-effect RF power transistor. It is intended for use in 50 V DC Figure 1. Pin connection large signal applications up to 250 MHz. 4 1 3 2 3. Gate 1. Drain 4. Source 2. Source Table 1. Device summary (1) Order code Marking Base qty. Package Packaging (1) SD4931 SD4931 25 pcs M174 Plastic tray 1. For more details please refer to Chapter 5: Marking, packing and shipping specifications. June 2013 DocID15486 Rev 4 1/13 This is information on a product in full production. www.st.comContents SD4931 Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static 4 2.2 Dynamic . 4 3 Typical performance . 5 4 Package mechanical data . 9 5 Marking, packing and shipping specifications . 11 6 Revision history . 12 2/13 DocID15486 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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