Product Information

SCT10N120H

Name: SCT10N120H
Brand: STMicroelectronics
SKU: SCT10N120H_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

SCT10N120H electronic component of STMicroelectronics

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Datasheet

MOSFET Silicon carbide Power MOSFET 1200 V 12 A 520 mOhm

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 1000 Multiples : 1 SCT10N120H STMicroelectronics	1000 : USD 6.7077	N/A Obsolete

0 - WHS 2 MOQ : 1 Multiples : 1 SCT10N120H STMicroelectronics	1 : USD 8.5647 10 : USD 5.5491 100 : USD 4.914 250 : USD 4.6689 500 : USD 4.4906 1000 : USD 4.4126 2000 : USD 4.2454 5000 : USD 4.1786 10000 : USD 4.0783	N/A Obsolete

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Additional Infomation About Product

SCT10N120H Datasheet Silicon carbide Power MOSFET 1200 V, 13 A, 500 m (typ., T =25 C), in an HPAK-2 package J Features TAB Very tight variation of on-resistance vs temperature Very high operating temperature capability (T = 175 C) J Very fast and robust intrinsic body diode 2 3 Low capacitance 1 2 H PAK-2 Application High voltage DC-DC converters Switch mode power supplies D(TAB) Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per G(1) unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. S(2,3) NCHG1DTABS23 Product status link SCT10N120H Product summary Order code SCT10N120H Marking SCT10N120 2 Package H PAK-2 Packing Tape and reel DS13479 - Rev 1 - October 2020 www.st.com For further information contact your local STMicroelectronics sales office.SCT10N120H Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 1200 V DS V Gate-source voltage -10 to 25 V GS I Drain current (continuous) at T = 25 C 13 A D C I Drain current (continuous) at T = 100 C 10 A D C (1) I Drain current (pulsed) 30 A DM P Total power dissipation at T = 25 C 130 W TOT C T Storage temperature range C stg -55 to 175 T Operating junction temperature range C j 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case 1.17 C/W (1) R Thermal resistance junction-pcb 40 C/W thj-pcb 1. When mounted on 1 inch FR-4 board, 2 oz Cu. DS13479 - Rev 1 page 2/15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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