Product Information

STD10N60DM2

STD10N60DM2 electronic component of STMicroelectronics

Datasheet
MOSFET POWER MOSFET
1200V N-channel Power MOSFET with low on-resistance.

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.5134 ea
Line Total: USD 1283.5

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 2500
Multiples : 1

Stock Image

STD10N60DM2
STMicroelectronics

2500 : USD 0.9647
3000 : USD 0.9551
4000 : USD 0.9455
5000 : USD 0.9361
6000 : USD 0.9267
10000 : USD 0.9175
20000 : USD 0.9083
25000 : USD 0.8993
50000 : USD 0.8903

0 - WHS 2


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 2500
Multiples : 2500

Stock Image

STD10N60DM2
STMicroelectronics

2500 : USD 0.9552
5000 : USD 0.8844

0 - WHS 3


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

STD10N60DM2
STMicroelectronics

1 : USD 4.2719
10 : USD 1.5431
25 : USD 1.4602

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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The STD10N60DM2 is a N-channel Power MOSFET from STMicroelectronics' PowerMESH™ II series. With a maximum drain source voltage of 600V and a maximum drain current of 10A, this device is designed for use as a switch in power applications such as motor controls, power supplies, UPS, ITE (industrial, telecom and computing) and consumer applications. It features low on-state resistance and fast switching capabilities thanks to its advanced design, providing improved energy efficiency and high speed operation. The device is highly durable and robust and can withstand high levels of temperature and voltage. Furthermore, its design also allows for low gate charge and low gate-drain capacitance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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