Product Information

STD10P10F6

STD10P10F6 electronic component of STMicroelectronics

Datasheet
MOSFET P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

477: USD 0.2544 ea
Line Total: USD 121.35

16975 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 477  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2425 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 2500
Multiples : 2500

Stock Image

STD10P10F6
STMicroelectronics

2500 : USD 0.4946
5000 : USD 0.4847
12500 : USD 0.4847
25000 : USD 0.4847

16975 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 477
Multiples : 1

Stock Image

STD10P10F6
STMicroelectronics

477 : USD 0.2544

2425 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 2500
Multiples : 2500

Stock Image

STD10P10F6
STMicroelectronics

2500 : USD 0.4946
5000 : USD 0.4847

1935 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 37
Multiples : 1

Stock Image

STD10P10F6
STMicroelectronics

37 : USD 1.037
50 : USD 0.8824
100 : USD 0.7556
200 : USD 0.7158
500 : USD 0.6561

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

STD10P10F6 P-channel 100 V, 0.136 typ., 10 A STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max I DSS DS(on) D STD10P10F6 100 V 0.18 10 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications D(2, TAB) Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all G(1) DS(on) packages. Table 1: Device summary Order code Marking Package Packaging STD10P10F6 10P10F6 DPAK Tape and reel S(3) AM11258v1 For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. October 2014 DocID026365 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STD10P10F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Package mechanical data ............................................................... 8 3.1 DPAK (TO-252) type A mechanical data ........................................... 9 4 DPAK (TO-252) tape and reel mechanical data ........................... 12 5 Revision history ............................................................................ 14 2/15 DocID026365 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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