PSMN4R3-100ES,127

PSMN4R3-100ES N-channel 100 V 4.3 m standard level MOSFET in I2PAK Rev. 1 31 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current T =25C V =10 V see Figure 1 - - 120 A D mb GS P total power dissipation T =25C see Figure 2 - - 338 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10 V I =25A T = 100 C -6.6 7.8 m DSon GS D j resistance see Figure 12 see Figure 13 2 =10 V I =25A T =25C -3.7 4.3 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10 V I =75A V =50V -49 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 170 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10 V T =25 C I =120 A - - 537 mJ DS(AL)S GS j(init) D avalanche energy V 100 V R =50 Unclamped sup GS 1 Continuous current limited by package 2 Measured 3 mm from package.PSMN4R3-100ES Nexperia N-channel 100 V 4.3 m standard level MOSFET in I2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R3-100ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R =20k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T =100 C see Figure 1 -119 A D GS j 1 V =10V T = 25 C see Figure 1 - 120 A GS mb I peak drain current pulsed t 10 s T =25C - 673 A DM p mb see Figure 3 P total power dissipation T = 25 C see Figure 2 - 338 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode 1 I source current T =25C - 120 A S mb I peak source current pulsed t 10 s T = 25 C - 673 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I = 120 A - 537 mJ DS(AL)S GS j(init) D avalanche energy V 100 V R =50 Unclamped sup GS 1 Continuous current limited by package PSMN4R3-100ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 31 October 2011 2 of 14