Product Information

PSMN5R6-60YLX

PSMN5R6-60YLX electronic component of Nexperia

Datasheet
MOSFET PSMN5R6-60YL/LFPAK/REEL 7" Q1/
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.981 ea
Line Total: USD 0.98

153198 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1000 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

PSMN5R6-60YLX
Nexperia

1 : USD 1.1229
10 : USD 0.9457
30 : USD 0.8492
100 : USD 0.7389
500 : USD 0.6541
1500 : USD 0.6325

153198 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

PSMN5R6-60YLX
Nexperia

1 : USD 0.981
10 : USD 0.8188
100 : USD 0.6555
500 : USD 0.5623
1000 : USD 0.4796
1500 : USD 0.4554
3000 : USD 0.4439
9000 : USD 0.4439

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

PSMN5R6-60YL N-channel 60 V, 5.6 m logic level MOSFET in LFPAK56 3 June 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low R and low gate charge DSon Logic level gate operation Avalanche rated, 100% tested LFPAK provides maximum power density in a Power SO8 package 3. Applications Synchronous rectifier in LLC topology Chargers & adaptors with V < 10 V out Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 60 V DS j I drain current V = 5 V T = 25 C Fig. 2 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 167 W tot mb Static characteristics R drain-source on-state V = 5 V I = 25 A T = 25 C Fig. 11 - 5.4 7.2 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 25 A V = 48 V V = 5 V - 12 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 j 1 Continuous current is limited by package.Nexperia PSMN5R6-60YL N-channel 60 V, 5.6 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R6-60YL LFPAK56 Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN5R6-60YL 5R6L60 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 60 V DS j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 167 W tot mb I drain current V = 5 V T = 25 C Fig. 2 1 - 100 A D GS mb V = 5 V T = 100 C Fig. 2 - 72 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 405 A DM p mb T storage temperature -55 175 C stg PSMN5R6-60YL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 3 June 2016 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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