PSMN6R5-30MLDX

PSMN6R5-30MLD N-channel 30 V, 6.5 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 21 January 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperias unique SchottkyPlus technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits Ultra low Q , Q and Q for high system efficiency, especially at higher switching G GD OSS frequencies Superfast switching with soft-recovery s-factor > 1 Low spiking and ringing for low EMI designs Unique SchottkyPlus technology Schottky-like performance with < 1 A leakage at 25 C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Mini Power SO8 package no glue, no wire bonds, qualified to 175 C Exposed leads for optimal visual solder inspection 3. Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current V = 10 V T = 25 C Fig. 2 - - 65 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 51 W tot mb Static characteristics R drain-source on-state V = 4.5 V I = 15 A T = 25 C - 7 8.6 m DSon GS D j resistance Fig. 10 Dynamic characteristics Q gate-drain charge I = 15 A V = 15 V V = 4.5 V - 1.7 3 nC GD D DS GS Fig. 12 Fig. 13Nexperia PSMN6R5-30MLD N-channel 30 V, 6.5 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D mounting base connected to drain 1 2 3 4 LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN6R5-30MLD LFPAK33 Plastic single ended surface mounted package (LFPAK33) 8 SOT1210 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN6R5-30MLD 6D530L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V drain-gate voltage 25 C T 175 C R = 20 k - 30 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 51 W tot mb I drain current V = 10 V T = 25 C Fig. 2 - 65 A D GS mb V = 10 V T = 100 C Fig. 2 - 46 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 262 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering - 260 C sld(M) temperature Source-drain diode I source current T = 25 C - 42 A S mb I peak source current pulsed t 10 s T = 25 C - 262 A SM p mb Avalanche ruggedness PSMN6R5-30MLD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 21 January 2019 2 / 12