Product Information

PSMN6R3-120ESQ

PSMN6R3-120ESQ electronic component of NXP

Datasheet
MOSFET 120V 6.7mOhm stndrd level MOSFET
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 5.166
10 : USD 2.1067
100 : USD 1.684
500 : USD 1.4868
1000 : USD 1.323
2500 : USD 1.3104
5000 : USD 1.2978
10000 : USD 1.2537
25000 : USD 1.2046
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Additional Infomation About Product

PSMN6R3-120ES N-channel 120 V 6.7 m standard level MOSFET in I2PAK 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Improved dynamic avalanche performance Suitable for standard level gate drive I2PAK package for slimline adaptors & height constrained applications 3. Applications AC-to-DC power supply Synchronous rectification Motor control Slimline adaptors & chargers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 120 V DS j j I drain current T = 25 C V = 10 V Fig. 1 - - 70 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 405 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 4 5.7 6.7 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 60 V - 61.9 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 207.1 - nC G(tot) Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 70 A - - 532 mJ DS(AL)S GS j(init) D source avalanche V 120 V unclamped R = 50 sup GS energy Fig. 3Nexperia PSMN6R3-120ES N-channel 120 V 6.7 m standard level MOSFET in I2PAK 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D drain 1 2 3 I2PAK (SOT226) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN6R3-120ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 120 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 120 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 70 A D GS mb V = 10 V T = 100 C Fig. 1 - 70 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 280 A DM p mb P total power dissipation T = 25 C Fig. 2 - 405 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T = 25 C - 70 A S mb I peak source current pulsed t 10 s T = 25 C - 280 A SM p mb PSMN6R3-120ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 2 / 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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