X-On Electronics has gained recognition as a prominent supplier of PSMN6R3-120PS mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN6R3-120PS mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN6R3-120PS Nexperia

PSMN6R3-120PS electronic component of Nexperia
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Part No.PSMN6R3-120PS
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-Channel MOSFET
Datasheet: PSMN6R3-120PS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 2.9 ea
Line Total: USD 14500

Availability - 0
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 5000
Multiples : 1
5000 : USD 2.9498

0 - WHS 2


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 5000
Multiples : 5000
5000 : USD 2.9

0 - WHS 3


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 5.88
3 : USD 5.278
5 : USD 3.9592
12 : USD 3.7436

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the PSMN6R3-120PS from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN6R3-120PS and other electronic components in the MOSFET category and beyond.

PSMN6R3-120PS N-channel 120 V 6.7 m standard level MOSFET in TO-220 7 June 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Improved dynamic avalanche performance Suitable for standard level gate drive TO-220 package can be mounted to heatsink 3. Applications AC-to-DC power supply Synchronous rectification Motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 120 V DS j j I drain current T = 25 C V = 10 V Fig. 1 - - 70 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 405 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 4 5.7 6.7 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 60 V - 61.9 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 207.1 - nC G(tot) Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 70 A - - 532 mJ DS(AL)S GS j(init) D source avalanche V 120 V unclamped R = 50 sup GS energy Fig. 3Nexperia PSMN6R3-120PS N-channel 120 V 6.7 m standard level MOSFET in TO-220 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D drain 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN6R3-120PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 120 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 120 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 70 A D GS mb V = 10 V T = 100 C Fig. 1 - 70 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 280 A DM p mb P total power dissipation T = 25 C Fig. 2 - 405 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T = 25 C - 70 A S mb PSMN6R3-120PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 7 June 2013 2 / 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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