Product Information

PSMN4R3-80ES,127

PSMN4R3-80ES,127 electronic component of Nexperia

Datasheet
MOSFET N-Ch 80V 4.3 mOhms
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.8548 ea
Line Total: USD 6.85

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 3.7701
10 : USD 2.5548
100 : USD 2.1025
500 : USD 1.8218
1000 : USD 1.5515
2500 : USD 1.4927
5000 : USD 1.4927
10000 : USD 1.4339
25000 : USD 1.3752

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 9
Multiples : 1
9 : USD 3.926

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Deleted
Configuration
Transistor Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

PSMN4R3-80ES N-channel 80 V, 4.3 m standard level MOSFET in I2PAK Rev. 02 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j 1 I drain current T =25C V =10V - - 120 A D mb GS see Figure 1 total power T =25C see Figure 2 - - 306 W P tot mb dissipation T junction temperature -55 - 175 C j Static characteristics 2 R drain-source V =10V I =25A -3.7 4.3 m DSon GS D on-state resistance T = 25 C see Figure 13 j 2 V =10V I =25A -6.1 7.1 m GS D T =100 C see Figure 12 j Dynamic characteristics gate-drain charge V =10V I =75A -28 -nC Q GD GS D V = 40 V see Figure 14 DS total gate charge - 111 - nC Q G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C - - 676 mJ DS(AL)S GS j(init) drain-source I = 120 A V 80 V D sup avalanche energy R =50 unclamped GSPSMN4R3-80ES Nexperia N-channel 80 V, 4.3 m standard level MOSFET in I2PAK 1 Continuous current is limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R3-80ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 PSMN4R3-80ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 18 April 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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