Product Information

PSMN4R4-30MLC,115

PSMN4R4-30MLC,115 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET N-channel MOSFET logic level LFPAK33

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.828 ea
Line Total: USD 0.83

1406 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
271 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.6627
10 : USD 0.4986
30 : USD 0.3949
100 : USD 0.3453
500 : USD 0.3173
1500 : USD 0.3024

1406 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.828
10 : USD 0.7084
100 : USD 0.4899
500 : USD 0.4094
1000 : USD 0.3668
1500 : USD 0.2979
3000 : USD 0.253
9000 : USD 0.2346
24000 : USD 0.2323

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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PSMN4R4-30MLC N-channel 30 V 4.65 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low parasitic inductance and Ultra low QG, QGD, & QOSS for high resistance system efficiencies at low and high loads Optimised for 4.5V Gate drive utilising NextPower Superjunction technology 1.3 Applications DC-to-DC converters Synchronous buck regulator Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T = 25 C --30 V V DS j 1 drain current T =25C V =10V see Figure 1 --70 A I D mb GS total power dissipation T =25C see Figure 2 --69 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =4.5 V I =25A T =25C -5.2 6 m R DSon GS D j resistance see Figure 10 V =10V I =25A T =25C - 4.05 4.65 m GS D j see Figure 10 Dynamic characteristics Q gate-drain charge V =4.5 V I =25A V =15V -2.9 -nC GD GS D DS see Figure 12 see Figure 13 total gate charge V =4.5 V I =25A V =15V - 10.6 - nC Q G(tot) GS D DS see Figure 12 see Figure 13 1 Continuous current is limited by package.PSMN4R4-30MLC Nexperia N-channel 30 V 4.65 m logic level MOSFET in LFPAK33 using NextPower Technology 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 142 3 SOT1210 (LFPAK33) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R4-30MLC LFPAK33 Plastic single ended surface mounted package (LFPAK33) SOT1210 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS 1 I drain current V =10V T =25C see Figure 1 -70 A D GS mb V =10V T = 100 C see Figure 1 -64 A GS mb I peak drain current pulsed t 10 s T =25C - 363 A DM p mb see Figure 4 P total power dissipation T =25C see Figure 2 -69 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 240 - V ESD Source-drain diode I source current T =25C - 63 A S mb I peak source current pulsed t 10 s T = 25 C - 363 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =70A - 28.6 mJ DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS see Figure 3 1 Continuous current is limited by package. PSMN4R4-30MLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 15 June 2012 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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