Product Information

PSMN5R0-80PS,127

PSMN5R0-80PS,127 electronic component of Nexperia

Datasheet
MOSFET N-CH 80V 4.7 mOhm Standard MOSFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.3075 ea
Line Total: USD 3.31

2836 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2737 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 2.4955
10 : USD 2.162
50 : USD 2.139
100 : USD 1.8745
250 : USD 1.863
500 : USD 1.725
1000 : USD 1.6675

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

PSMN5R0-80PS N-channel 80 V 4.7 m standard level MOSFET Rev. 02 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 - - 270 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =25A -21 -nC GD GS D V = 40 V see Figure 14 DS see Figure 15 Static characteristics R drain-source V =10V I =15A 1 -3.7 4.7 m DSon GS D on-state resistance T =25C j 1 Measured 3 mm from package.Nexperia PSMN5R0-80PS N-channel 80 V 4.7 m standard level MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R0-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 SC-46 TO-220AB Nexperia B.V. 2017. All rights reserved PSMN5R0-80PS 2 Product data sheet Rev. 02 23 June 2009 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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