Product Information

PSMN4R3-30BL,118

PSMN4R3-30BL,118 electronic component of Nexperia

Datasheet
MOSFET Std N-chanMOSFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.4468 ea
Line Total: USD 2.45

9308 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
9287 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 1.4835
10 : USD 1.2305
100 : USD 0.9832
500 : USD 0.9764
800 : USD 0.7176
2400 : USD 0.6854
9600 : USD 0.6854

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

PSMN4R3-30BL N-channel 30 V 4.1 m logic level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j 1 I drain current T =25C V = 10 V see Figure 1 - - 100 A D mb GS P total power dissipation T = 25 C see Figure 2 - - 103 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =15 A T =100 C -4.9 5.8 m DSon GS D j resistance see Figure 12 see Figure 13 =10V I =15 A T =25C -3.5 4.1 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V = 4.5 V I =15A V =15V -5 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 19 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I = 100 A --74 mJ DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS 1 Continuous current is limited by package.PSMN4R3-30BL Nexperia N-channel 30 V 4.1 m logic level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R3-30BL D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN4R3-30BL PSMN4R3-30BL PSMN4R3-30BL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 22 March 2012 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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