Product Information

STGD7NB60ST4

STGD7NB60ST4 electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors N-Ch 600 Volt 7 Amp
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.757 ea
Line Total: USD 1892.5

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 2500
Multiples : 2500

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STGD7NB60ST4
STMicroelectronics

2500 : USD 1.7372
5000 : USD 1.7199
10000 : USD 1.7026
15000 : USD 1.6857
20000 : USD 1.6688
25000 : USD 1.652
30000 : USD 1.6355
50000 : USD 1.6193
100000 : USD 1.603

0 - WHS 2


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STGD7NB60ST4
STMicroelectronics

1 : USD 5.8771
10 : USD 2.1126
25 : USD 1.9884

0 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 2500
Multiples : 2500

Stock Image

STGD7NB60ST4
STMicroelectronics

2500 : USD 0.757

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Tradename
LoadingGif

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Additional Infomation About Product

STGD7NB60S N-CHANNEL 7A - 600V DPAK Power MESH IGBT TYPE V V I CES CE(sat) C STGD7NB60S 600 V < 1.6 V 7 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (V ) cesat HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT 3 SURFACE-MOUNTING DPAK (TO-252) 1 POWER PACKAGE IN TAPE & REEL (SUFFIXT4 ) DPAK TO-252 DESCRIPTION (SuffixT4 ) Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix identifies a family optimized to achieve minimum on-voltage drop INTERNAL SCHEMATIC DIAGRAM for low frequency applications (<1kHz). APPLICATIONS LIGHT DIMMER STATIC RELAYS MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 600 V CES GS V Reverse Battery Protection 20 V ECR V Gate-Emitter Voltage 20 V GE o I Collector Current (continuous) at T = 25 C15 A C c o I Collector Current (continuous) at T = 100 C7 A C c I () Collector Current (pulsed) 60 A CM o P Total Dissipation at T = 25 C55 W tot c o Derating Factor 0.44 W/ C o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Junction Temperature 150 C () Pulse width limited by safe operating area 1/8 November 1999STGD7NB60S THERMAL DATA o R Thermal Resistance Junction-case Max 2.27 C/W thj-case o R Thermal Resistance Junction-ambient Max 100 C/W thj-amb o R Thermal Resistance Case-sink Typ 1.5 C/W thc-sink o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) j OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Collector-Emitter I = 250 A V = 0 600 V BR(CES) C GE Breakdown Voltage V Emitter-Collector IC = 1 mA V = 0 20 V BR(ECR) GE Breakdown Voltage o I Collector cut-off V = Max Rating T = 25 C 10 A CES CE j o (V = 0) V = Max Rating T = 125 C 100 A GE CE j I Gate-Emitter Leakage V = 20 V V = 0 100 nA GES GE CE Current (V = 0) CE ON (* ) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGE(th) Gate Threshold VCE = VGE IC = 250 A 2.5 5 V Voltage V Collector-Emitter V = 15 V I = 3 A 1 1.4 V CE(SAT) GE C Saturation Voltage V = 15 V I = 7 A 1.2 1.6 V GE C o V = 15 V I = 7 A T = 125 C 1.1 V GE C j DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g Forward V =25 V I = 7 A 4 S fs CE C Transconductance C Input Capacitance V = 25 V f = 1 MHz V = 0 610 780 pF ies CE GE C Output Capacitance 65 85 pF oes C Reverse Transfer 12 15 pF res Capacitance Q Gate Charge V = 400 V I = 7 A V = 15 V 33 nC G CE C GE I Latching Current V = 480 V R =1k 15 A CL clamp G o T = 150 C j SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit t Delay Time V = 480 V I = 7 A 0.7 s d(on) CC C t Rise Time V = 15 V R = 1 K 0.46 s r GE G (di/dt) Turn-on Current Slope V = 480 V I = 7 A 8 A/s on CC C R = 1 K V = 15 V G GE o E Turn-on T = 125 C 0.4 mJ on j Switching Losses 2/8

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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