Product Information

STGFW20V60DF

STGFW20V60DF electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8: USD 1.4768 ea
Line Total: USD 11.81

37 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 8  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
37 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

STGFW20V60DF
STMicroelectronics

1 : USD 1.4768
10 : USD 1.411
100 : USD 1.3903
300 : USD 1.3775
600 : USD 1.3645
1200 : USD 1.3372
2700 : USD 1.3372
5100 : USD 1.3372

261 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

STGFW20V60DF
STMicroelectronics

1 : USD 2.6984
10 : USD 2.493
30 : USD 2.3662
90 : USD 2.2353
510 : USD 2.1769
990 : USD 2.1507

37 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 8
Multiples : 1

Stock Image

STGFW20V60DF
STMicroelectronics

8 : USD 1.4768
10 : USD 1.411
100 : USD 1.3903
300 : USD 1.3775
600 : USD 1.3645
1200 : USD 1.3372

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STGFW20V60DF Datasheet Trench gate field-stop IGBT, V series 600 V, 20 A very high speed Features Maximum junction temperature: T = 175 C J Tail-less switching off V = 1.8 V (typ.) I = 20 A CE(sat) C Tight parameter distribution 3 Safe paralleling 2 1 Low thermal resistance TO-3PF Very fast soft recovery antiparallel diode C (2) Applications Photovoltaic inverters Uninterruptible power supply G (1) Welding Power factor correction Very high frequency converters Sc12850 no tab E (3) Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive V temperature CE(sat) coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGFW20V60DF Product summary Order code STGFW20V60DF Marking G20V60DF Package TO-3PF Packing Tube DS10274 - Rev 3 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW20V60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 40 A C I C Continuous collector current at T = 100 C 20 A C (1) I Pulsed collector current 80 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 40 A C I F Continuous forward current at T = 100 C 20 A C (1) I Pulsed forward current 80 A FP Insulation withstand voltage (RMS) from all three leads to external heat sink V 3.5 kV ISO (t = 1 s, T = 25 C) C P Total power dissipation at T = 25 C 86.7 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance, junction-to-case IGBT 1.73 R C/W thJC Thermal resistance, junction-to-case diode 2.55 R Thermal resistance, junction-to-ambient 50 C/W thJA DS10274 - Rev 3 page 2/15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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