Product Information

STGFW40H65FB

STGFW40H65FB electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.4538 ea
Line Total: USD 5.45

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

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STGFW40H65FB
STMicroelectronics

1 : USD 5.4538
10 : USD 3.5729
25 : USD 3.3761

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J 3 2 1 3 2 High speed switching series 1 TO-3PF TO-247 Minimized tail current Very low saturation voltage: V = 1.6 V (typ) I = 40 A CE(sat) C Safe paralleling 3 2 1 Tight parameter distribution TO-247 long leads Low thermal resistance C(2, TAB) Applications Welding G(1) Power factor correction UPS Solar inverters Chargers E(3) G1C2TE3 Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGFW40H65FB STGW40H65FB STGWA40H65FB DS9908 - Rev 8 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW40H65FB, STGW40H65FB, STGWA40H65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-247, TO-247 long leads TO-3PF V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 80 C I A C Continuous collector current at T = 100 C 40 C (1) I Pulsed collector current 160 A CP V Gate-emitter voltage 20 V GE P Total power dissipation at T = 25 C 283 98.6 W TOT C Insulation withstand voltage (RMS) from all three leads to external heat sink V 3.5 kV ISO (t = 1 s T = 25 C) C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247, TO-247 long leads TO-3PF R Thermal resistance, junction-to-case 0.53 1.52 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS9908 - Rev 8 page 2/20

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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