Product Information

STGFW30V60F

STGFW30V60F electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

600: USD 1.4804 ea
Line Total: USD 888.24

0 - Global Stock
MOQ: 600  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 600
Multiples : 1

Stock Image

STGFW30V60F
STMicroelectronics

600 : USD 1.4804
1000 : USD 1.297

0 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STGFW30V60F
STMicroelectronics

1 : USD 7.4564
10 : USD 2.6822
25 : USD 2.5269

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STGFW30V60F, STGW30V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Features Maximum junction temperature: T = 175 C J Tail-less switching off V = 1.85 V (typ.) I = 30 A CE(sat) C 111 Tight parameter distribution 3 2 3 1 2 1 Safe paralleling TO-247 TO-3PF Low thermal resistance Applications Photovoltaic inverters C(2, TAB) Uninterruptible power supply Welding Power factor correction G(1) Very high frequency converters Description E(3) G1C2TE3 This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive V temperature CE(sat) coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW30V60F STGW30V60F Product summary Order code STGFW30V60F Marking GFW30V60F Package TO-3PF Packing Tube Order code STGW30V60F Marking GW30V60F Package TO-247 Packing Tube DS9827 - Rev 5 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW30V60F, STGW30V60F Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-247 TO-3PF V Collector-emitter voltage (V = 0 V) 600 V CES GE (1) Continuous collector current at T = 25 C 60 60 C I A C (1) Continuous collector current at T = 100 C 30 30 C (2) (1) I Pulsed collector current 120 A 120 CP V Gate-emitter voltage 20 V GE P Total power dissipation at T = 25 C 260 92 W TOT C Insulation withstand voltage (RMS) from all three leads to V 3.5 kV ISO external heat sink (t = 1 s, T = 25 C) C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247 TO-3PF R Thermal resistance, junction-to-case 0.58 1.63 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS9827 - Rev 5 page 2/17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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