Product Information

STGFW30H65FB

STGFW30H65FB electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

30: USD 3.6326 ea
Line Total: USD 108.98

0 - Global Stock
MOQ: 30  Multiples: 30
Pack Size: 30

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STGFW30H65FB
STMicroelectronics

1 : USD 7.6377
10 : USD 2.7547
25 : USD 2.5994

0 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 30
Multiples : 30

Stock Image

STGFW30H65FB
STMicroelectronics

30 : USD 3.6326
100 : USD 2.9762
500 : USD 2.5335

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current 111 V = 1.55 V (typ.) at I = 30 A 3 CE(sat) C 2 3 1 2 1 Tight parameters distribution TO-247 TO-3PF Safe paralleling Low thermal resistance Applications C(2, TAB) Photovoltaic inverters Power factor correction Welding G(1) High-frequency converters Description E(3) G1C2TE3 These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status links STGFW30H65FB STGW30H65FB DS10155 - Rev 7 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW30H65FB, STGW30H65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-247 TO-3PF V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 60 A C I C Continuous collector current at T = 100 C 30 A C (1) I Pulsed collector current 120 A CP V Gate-emitter voltage 20 V GE P Total power dissipation at T = 25 C 260 92 W TOT C Insulation withstand voltage (RMS) from all three leads to external V 3.5 kV ISO heat sink (t = 1 s T = 25 C) c T Storage temperature range -55 to 150 C stg T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247 TO-3PF R Thermal resistance, junction-to-case 0.58 1.63 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS10155 - Rev 7 page 2/18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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