Product Information

STGF6M65DF2

STGF6M65DF2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.7425 ea
Line Total: USD 37.12

48 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 50  Multiples: 50
Pack Size: 50

 More Buying Options & Price Grid(s)

Availability Price Quantity
48 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 50
Multiples : 50

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STGF6M65DF2
STMicroelectronics

50 : USD 0.7425
100 : USD 0.7276

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Numofpackaging
Factory Pack Quantity :
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Additional Infomation About Product

STGF6M65DF2 Trench gate field-stop IGBT, M series 650 V, 6 A low loss Datasheet - production data Features 6 s of short-circuit withstand time VCE(sat) = 1.55 V (typ.) IC = 6 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS TO-220FP PFC Figure 1: Internal schematic diagram Description C (2) This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit G (1) functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Sc12850 no tab E (3) Table 1: Device summary Order code Marking Package Packing STGF6M65DF2 G6M65DF2 TO-220FP Tube August 2016 DocID028668 Rev 3 1/17 www.st.com This is information on a product in full production. Contents STGF6M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 STGF6M65DF2 electrical characteristics curves .............................. 7 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 TO-220FP package information ...................................................... 14 5 Revision history ............................................................................ 16 2/17 DocID028668 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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