Product Information

STGD7NC60HT4

STGD7NC60HT4 electronic component of STMicroelectronics

Datasheet
IGBT Transistors N-Ch 600 Volt 14 Amp

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9705 ea
Line Total: USD 0.97

116 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2347 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

STGD7NC60HT4
STMicroelectronics

1 : USD 1.4945
10 : USD 1.4779
25 : USD 1.4612
100 : USD 1.4446
250 : USD 1.4157
500 : USD 1.4157
1000 : USD 1.4157

116 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

STGD7NC60HT4
STMicroelectronics

1 : USD 0.9705

116 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 8
Multiples : 1

Stock Image

STGD7NC60HT4
STMicroelectronics

8 : USD 0.9705

2347 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 6
Multiples : 1

Stock Image

STGD7NC60HT4
STMicroelectronics

6 : USD 1.4945
10 : USD 1.4779
25 : USD 1.4612
100 : USD 1.4446
250 : USD 1.4157

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STGD7NC60HT4 Datasheet N-channel 600 V, 14 A, very fast IGBT Features V V max. I (at T = 100 C) Order codes TAB CES CE(sat) C C STGD7NC60HT4 600 V 2.5 V 14 A 3 2 1 Low on-voltage drop (V ) CE(sat) DPAK High-frequency operation up to 70 kHz C(2, TAB) Applications Switching applications G(1) Description This device is a very fast IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching E(3) performance and low on-state behavior. This device is well-suited for resonant or G1C2TE3 soft-switching applications. Product status link STGD7NC60HT4 Product summary Order code STGD7NC60HT4 Marking GD7NC60H Package DPAK Packing Tape and reel DS11749 - Rev 3 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGD7NC60HT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 25 A C I C Continuous collector current at T = 100 C 14 A C (1) I Pulsed collector current 50 A CM V Gate-emitter voltage 20 V GE P Total dissipation at T = 25 C 70 W TOT C T Storage temperature range STG -55 to 150 C T Operating junction temperature range J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.78 C/W thJ-case R Thermal resistance junction-ambient 100 C/W thJ-amb DS11749 - Rev 3 page 2/19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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