Product Information

STGF10NB60SD

STGF10NB60SD electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors N-Ch 600 Volt 10 Amp
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9475 ea
Line Total: USD 1.95

3 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
994 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

Stock Image

STGF10NB60SD
STMicroelectronics

1000 : USD 1.3185

3 - WHS 2


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STGF10NB60SD
STMicroelectronics

1 : USD 1.9475
10 : USD 1.6595
50 : USD 1.5024
100 : USD 1.3233
500 : USD 1.2447
1000 : USD 1.2084

91 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STGF10NB60SD
STMicroelectronics

1 : USD 2.496
3 : USD 2.262
9 : USD 1.924
24 : USD 1.82
250 : USD 1.755

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

The STGF10NB60SD IGBT Transistors N-Ch 600 Volt 10 Amp is a part manufactured by STMicroelectronics. It is a type of metal oxide semiconductor field effect transistor (MOSFET) constructed with an insulated gate, representing a very low power on-state resistance and high efficient switching performance. It is used for applications requiring a rated voltage of 600V and a current rating of 10A. It requires gate current of 4mA (forty times lower than regular bipolar junction transistors) while achieving a switching speed of 25kHz. It features a good balance of price and performance and can be used in applications related to motor drive, power supplies, and renewable energy.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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