Product Information

STGD18N40LZT4

STGD18N40LZT4 electronic component of STMicroelectronics

Datasheet
IGBT Transistors EAS 180 mJ-400 V clamped IGBT
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 1.4133 ea
Line Total: USD 9.89

2318 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 7  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
137 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

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STGD18N40LZT4
STMicroelectronics

1 : USD 3.5342
10 : USD 3.1295
30 : USD 2.8736
100 : USD 2.6139
500 : USD 2.4971
1000 : USD 2.4467

2318 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 7
Multiples : 1

Stock Image

STGD18N40LZT4
STMicroelectronics

7 : USD 1.4133
10 : USD 1.3993
25 : USD 1.2501
100 : USD 1.1741
250 : USD 1.1506

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Maximum Gate Emitter Voltage
Qualification
Package / Case
Packaging
Technology
Mounting Style
Technology
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
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Height
Length
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Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

STGD18N40LZT4 Datasheet Automotive-grade 390 V internally clamped IGBT E 180 mJ SCIS Features TAB AEC-Q101 qualified 3 2 SCIS energy of 180 mJ T = 150 C, L = 3 mH C 1 Parts are 100% tested in SCIS DPAK ESD gate-emitter protection C (2 or TAB) Gate-collector high voltage clamping Logic level gate drive Very low saturation voltage High pulsed current capability R G Gate and gate-emitter resistor G (1) R GE Applications Pencil coil electronic ignition driver E (3) IGBTG1C2TABE3ESD Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required. Product status link STGD18N40LZT4 Product summary Order code STGD18N40LZT4 Marking GD18N40LZ Package DPAK Packing Tape and reel DS13627 - Rev 1 - January 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGD18N40LZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) V V CES GE CES(clamped) V Emitter-collector voltage (V = 0 V) 20 V ECS GE I Continuous collector current at T = 100 C 30 A C C (1) I Pulsed collector current 40 A CP V V Gate-emitter voltage V GE GE(clamped) P Total power dissipation at T = 25 C 150 W TOT C Single pulse energy T = 25 C, L = 3 mH, V = 50 V 300 mJ C CC (2) E SCIS Single pulse energy T = 150 C, L = 3 mH, V = 50 V 180 mJ C CC Human body model, R = 1.5 k, C = 100 pF 8 kV ESD Machine model, R = 0, C = 100 pF 800 V Charged device model 2 kV T Storage temperature range C STG -55 to 175 T Operating junction temperature range C J 1. Pulse width limited by max. junction temperature. 2. For E test circuit refer to Figure 14. Test circuit for inductive load switching with A and B not connected. SCIS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 1 C/W thJC R Thermal resistance, junction-to-ambient 100 C/W thJA DS13627 - Rev 1 page 2/16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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