Product Information

STFW2N105K5

STFW2N105K5 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

26: USD 1.5112 ea
Line Total: USD 39.29

873 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 26  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
873 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 26
Multiples : 1

Stock Image

STFW2N105K5
STMicroelectronics

26 : USD 1.5357
50 : USD 1.5064

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Continuous Drain Current
Gate-Source Voltage Max
Operating Temperature Classification
Operating Temp Range
Pin Count
Number Of Elements
Rad Hardened
Power Dissipation
Polarity
Type
Mounting
Package Type
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STFW2N105K5 N-channel 1050 V, 6 typ., 1.5 A Zener-protected SuperMESH 5 Power MOSFET in a TO-3PF package Datasheet - preliminary data Features Order code V R max I P DS DS(on) D TOT STFW2N105K5 1050 V 8 1.5 A 30 W 111 Worldwide best FOM (figure of merit) Ultra low gate charge 3 100% avalanche tested 2 1 Zener-protected TO-3PF Applications Switching applications Figure 1. Internal schematic diagram Description This N-channel Zener-protected Power MOSFET is designed using STs revolutionary avalanche- rugged very high voltage SuperMESH 5 technology, based on an innovative proprietary * vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. 6 AM01476v1 Table 1. Device summary Order code Marking Package Packaging STFW2N105K5 2N105K5 TO-3PF Tube May 2014 DocID026320 Rev 1 1/14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com change without notice. Contents STFW2N105K5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 13 2/14 DocID026320 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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