Product Information

STFU15N80K5

STFU15N80K5 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 800 V, 0.3 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP ultra narrow leads package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.5613 ea
Line Total: USD 2.56

1 - Global Stock
Ships to you between
Thu. 09 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

STFU15N80K5
STMicroelectronics

1 : USD 2.5613
10 : USD 2.5087
25 : USD 2.3713
100 : USD 2.1412
250 : USD 2.055
500 : USD 1.9863
1000 : USD 1.9465
2000 : USD 1.9465
5000 : USD 1.9465

970 - WHS 2


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 13
Multiples : 1

Stock Image

STFU15N80K5
STMicroelectronics

13 : USD 2.9756
50 : USD 2.6491

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STFU15N80K5 Datasheet N-channel 800 V, 300 m typ., 14 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package Features V R max. I Order code DS DS(on ) D STFU15N80K5 800 V 375 m 14 A Industrys lowest R x area DS(on) 3 Industrys best FoM (figure of merit) 2 1 Ultra-low gate charge TO-220FP 100% avalanche tested ultra narrow leads Zener-protected D(2) Applications G(1) Switching applications Description S(3) AM15572v1 no tab This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STFU15N80K5 Product summary Order code STFU15N80K5 Marking 15N80K5 TO-220FP ultra narrow Package leads Packing Tube DS10950 - Rev 3 - May 2020 www.st.com For further information contact your local STMicroelectronics sales office.STFU15N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 14 A D C (1) Drain current (continuous) at T = 100 C I 8.8 A D C (2) I Drain current (pulsed) 56 A DM P Total power dissipation at T = 25 C 35 W TOT C Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 V 2500 V ISO s T =25 C) C (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Storage temperature range stg - 55 to 150 C T Operating junction temperature range J 1. Limited by package. 2. Pulse width limited by safe operating area. 3. I 14 A, di/dt = 100 A/s V (peak) < V SD DS (BR)DSS. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 4.17 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 4 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 150 mJ AS j D AR DD DS10950 - Rev 3 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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