Product Information

STFI26N60M2

STFI26N60M2 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a I2PAKFP package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0154 ea
Line Total: USD 1.02

1435 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1433 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STFI26N60M2
STMicroelectronics

1 : USD 0.9859

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STF26N60M2, STFI26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features V R DS DS(on) Order code I P D TOT T max. Jmax STF26N60M2 3 30 2 650 V 0.165 20 A 1 1 W 2 3 STFI26N60M2 2 TO-220FP I PAKFP (TO-281) Extremely low gate charge Excellent output capacitance (C ) profile OSS Figure 1: Internal schematic diagram 100% avalanche tested D(2) Zener-protected Applications Switching applications LCC converters, resonant converters G(1) Description These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, S(3) AM15572v1 no tab rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STF26N60M2 TO-220FP 26N60M2 Tube STFI26N60M2 IPAKFP July 2015 DocID027600 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STF26N60M2, STFI26N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP package information ...................................................... 10 4.2 IPAKFP (TO-281) package information ......................................... 12 5 Revision history ............................................................................ 14 2/15 DocID027600 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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