Product Information

STFI6N80K5

STFI6N80K5 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.8437 ea
Line Total: USD 2.84

1433 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
48 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 27
Multiples : 1

Stock Image

STFI6N80K5
STMicroelectronics

27 : USD 1.5097
50 : USD 1.3309

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STF6N80K5, STFI6N80K5 N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features Order code V R max I P DS DS(on) D TOT STF6N80K5 800 V 1.6 4.5 A 25 W STFI6N80K5 3 2 1 1 Industrys lowest R 2 DS(on) 3 TO-220FP 2 Industrys best figure of merit (FoM) I PAKFP Ultra low gate charge 100% avalanche tested Figure 1. Internal schematic diagram Zener-protected D(2) Applications Switching applications Description G(1) These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate S(3) charge for applications requiring superior power AM01476v1 density and high efficiency. Table 1. Device summary Order code Marking Package Packing STF6N80K5 TO-220FP 6N80K5 Tube 2 STFI6N80K5 I PAKFP September 2016 DocID024664 Rev 4 1/15 This is information on a product in full production. www.st.comContents STF6N80K5, STFI6N80K5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 4.1 TO-220FP package information 10 2 4.2 I PAKFP (TO-281) package information . 12 5 Revision history . 14 2/15 DocID024664 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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