Product Information

STFI8N80K5

STFI8N80K5 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-CH 800V 0.8Ohm typ 6A Zener-protected
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 1.6275 ea
Line Total: USD 40.69

34 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 25  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
34 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 25
Multiples : 1

Stock Image

STFI8N80K5
STMicroelectronics

25 : USD 1.6737

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STF8N80K5, STFI8N80K5 N-channel 800 V, 0.8 typ., 6 A MDmesh K5 2 Power MOSFET in TO-220FP and I PAKFP packages Datasheet production data Features Order codes V R max. I P DS DS(on) D TOT STF8N80K5 800 V 0.95 6 A 25 W STFI8N80K5 Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) 3 1 2 2 Ultra low gate charge 1 3 TO-220FP 2 I PAKFP (TO-281) 100% avalanche tested Zener-protected Applications Figure 1. Internal schematic diagram Switching applications D(2) Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 G(1) technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STF8N80K5 TO-220FP 8N80K5 Tube 2 STFI8N80K5 I PAKFP (TO-281) October 2014 DocID024419 Rev 3 1/15 This is information on a product in full production. www.st.com 15Contents STF8N80K5, STFI8N80K5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 14 2/15 DocID024419 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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