Product Information

STFU13N65M2

STFU13N65M2 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0103 ea
Line Total: USD 2.01

29 - Global Stock
Ships to you between
Thu. 16 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
29 - WHS 1


Ships to you between
Thu. 16 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

STFU13N65M2
STMicroelectronics

1 : USD 1.8851
10 : USD 1.6293
50 : USD 1.4703
100 : USD 1.3071
500 : USD 1.2345
1000 : USD 1.2023

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Height
Length
Transistor Type
Width
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STFU13N65M2 N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) D STFU13N65M2 650 V 0.43 10A Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested 3 2 1 Zener-protected TO-220FP Applications ultra narrow leads Switching applications Figure 1: Internal schematic diagram Description D(2) This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high G(1) efficiency converters. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packaging TO-220FP STFU13N65M2 13N65M2 Tube ultra narrow leads May 2015 DocID027538 Rev 1 1/12 www.st.com This is information on a product in full production. Contents STFU13N65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuit ....................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 TO-220FP package information ........................................................ 9 5 Revision history ............................................................................ 11 2/12 DocID027538 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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