Product Information

STFU15NM65N

STFU15NM65N electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP ultra narrow leads package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.6477 ea
Line Total: USD 9.65

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 1
Multiples : 1

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STFU15NM65N
STMicroelectronics

1 : USD 5.7427
10 : USD 4.9559
100 : USD 4.0608
500 : USD 3.4568
1000 : USD 2.9154
2000 : USD 2.7696

0 - WHS 2


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1

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STFU15NM65N
STMicroelectronics

1 : USD 6.7923
10 : USD 4.4532

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STFU15NM65N N-channel 650 V, 0.35 typ., 12 A MDmesh II Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) D STFU15NM65N 650 V 0.38 12 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 2 1 Applications TO-220FP Switching applications ultra narrow leads Description Figure 1: Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STFU15NM65N 15NM65N TO-220FP ultra narrow leads Tube September 2015 DocID027631 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STFU15NM65N Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuit ....................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP ultra narrow leads package information ........................... 9 5 Revision history ............................................................................ 11 2/12 DocID027631 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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