Product Information

STFI20NM65N

Name: STFI20NM65N
Brand: STMicroelectronics
SKU: STFI20NM65N_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STFI20NM65N electronic component of STMicroelectronics

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Datasheet

N-Channel 650 V 15A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 1 Multiples : 1 STFI20NM65N STMicroelectronics	1 : USD 6.1625 10 : USD 5.316 100 : USD 4.3561 500 : USD 3.7083 1000 : USD 3.1275	N/A Obsolete

0 - WHS 2 MOQ : 1500 Multiples : 1 STFI20NM65N STMicroelectronics	1500 : USD 2.5305 3000 : USD 2.498 6000 : USD 2.3568	N/A Obsolete

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Additional Infomation About Product

STFI20NM65N N-channel 650 V, 15 A, 0.250 typ., MDmesh II Power MOSFET in a IPAKFP package Datasheet - production data Features Order code V T R max. I DSS jmax DS(on) D STFI20NM65N 710 V 0.270 15 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 2 Applications I PAKFP (TO-281) Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high * efficiency converters. 6 0 Y Table 1. Device summary Order code Marking Packages Packaging 2 STFI20NM65N 20NM65N I PAKFP (TO-281) Tube December 2013 DocID025737 Rev 1 1/12 This is information on a product in full production. www.st.comContents STFI20NM65N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 DocID025737 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 15 A 15 A
Vds - Drain-Source Breakdown Voltage 710 V 710 V
Rds On - Drain-Source Resistance 270 mOhms 270 mOhms
Transistor Polarity N - Channel N - Channel
Vgs - Gate-Source Breakdown Voltage 25 V 25 V
Vgs th - Gate-Source Threshold Voltage 4 V 4 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 30 W 30 W
Mounting Style Through Hole Through Hole
Package / Case I2PAKFP - 3 I2PAKFP - 3
Packaging Tube Tube
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 25 V 25 V
Qg - Gate Charge 44 nC 44 nC
Configuration Single Single
Series Stfi20nm65n Stfi20nm65n
Brand Stmicroelectronics Stmicroelectronics
Fall Time 21 ns 21 ns
Rise Time 13.5 ns 13.5 ns
Factory Pack Quantity : 50 50
Typical Turn-Off Delay Time 75 ns 75 ns
Transistor Type 1 N - Channel 1 N - Channel
Cnhts 8541290000 8541290000
Hts Code 8541290075 8541290075
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000
Typical Turn-On Delay Time 15 ns 15 ns