Product Information

NUF4000MUT2G

NUF4000MUT2G electronic component of ON Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 4L EMI FILTER W/ ESD

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1527: USD 0.2755 ea
Line Total: USD 420.69

0 - Global Stock
MOQ: 1527  Multiples: 1527
Pack Size: 1527
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

NUF4000MUT2G
ON Semiconductor

1 : USD 0.0612
10 : USD 0.0569
25 : USD 0.0552
50 : USD 0.0532
100 : USD 0.0514
250 : USD 0.0503
500 : USD 0.0503
1000 : USD 0.0503

0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1527
Multiples : 1527

Stock Image

NUF4000MUT2G
ON Semiconductor

1527 : USD 0.2755

     
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RoHS - XON
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NUF4000MU 4-Channel EMI Filter with Integrated ESD Protection The NUF4000MU is a four channel (CRC) Pistyle EMI filter array with integrated ESD protection. Its typical component values of R = 100 and C = 15 pF deliver a cutoff frequency of 105 MHz and NUF4000MU 14 8 5 (Bottom View) Figure 3. Pin Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 8 Filter + ESD Channel 1 Filter 2 2 & 7 Filter + ESD Channel 2 Filter 3 3 & 6 Filter + ESD Channel 3 Filter 4 4 & 5 Filter + ESD Channel 4 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC6100042 Contact Discharge V 8.0 kV PP Operating Temperature Range T 40 to 85 C OP Storage Temperature Range T 55 to 150 C STG Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage V 5.0 V RWM Breakdown Voltage V I = 1.0 mA 6.0 7.0 8.0 V BR R Leakage Current I V = 3.3 V 100 nA R RWM Resistance R I = 10 mA 85 100 115 A R Diode Capacitance C V = 2.5 V, f = 1.0 MHz 15 20 pF d R Line Capacitance C V = 2.5 V, f = 1.0 MHz 30 40 pF L R 3 dB CutOff Frequency (Note 1) f Above this frequency, 105 MHz 3dB appreciable attenuation occurs 6 dB CutOff Frequency (Note 1) f Above this frequency, 180 MHz 6dB appreciable attenuation occurs 1. 50 source and 50 load termination.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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