Product Information

NUF4310MNTAG

NUF4310MNTAG electronic component of ON Semiconductor

Datasheet
ON Semiconductor ESD Suppressors 4CH EMI FLTR IN WDFN

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3301 ea
Line Total: USD 0.33

4759 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3595 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

NUF4310MNTAG
ON Semiconductor

1 : USD 0.3301
10 : USD 0.299
100 : USD 0.2427
500 : USD 0.1978
1000 : USD 0.1852
3000 : USD 0.1668
9000 : USD 0.1576
24000 : USD 0.1576
45000 : USD 0.1576

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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NUF4310MN 4-Channel EMI Filter with Integrated ESD Protection The NUF4310MN is a four channel (CRC) Pistyle EMI filter array with integrated ESD protection. Its typical component values of R = 100 and C = 9 pF deliver a cutoff frequency of 185 MHz and NUF4310MN 14 8 5 (Bottom View) Figure 3. Pin Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 8 Filter + ESD Channel 1 Filter 2 2 & 7 Filter + ESD Channel 2 Filter 3 3 & 6 Filter + ESD Channel 3 Filter 4 4 & 5 Filter + ESD Channel 4 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC6100042 Contact Discharge V 8.0 kV PP Operating Temperature Range T 40 to 85 C OP Storage Temperature Range T 55 to 150 C STG Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage V 5.0 V RWM Breakdown Voltage V I = 1.0 mA 6.0 7.0 8.0 V BR R Leakage Current I V = 3.3 V 100 nA R RWM Resistance R I = 10 mA 85 100 115 A R Diode Capacitance C V = 2.5 V, f = 1.0 MHz 7.2 9 10.8 pF d R Line Capacitance C V = 2.5 V, f = 1.0 MHz 14.4 18 21.6 pF L R 3 dB CutOff Frequency (Note 1) f Above this frequency, 185 MHz 3dB appreciable attenuation occurs 6 dB CutOff Frequency (Note 1) f Above this frequency, 290 MHz 6dB appreciable attenuation occurs 1. 50 source and 50 load termination.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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