Product Information

NUF6400MNTBG

NUF6400MNTBG electronic component of ON Semiconductor

Datasheet
ON Semiconductor ESD Suppressors 6 LN EMI FILTER WES

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3697 ea
Line Total: USD 0.37

1799 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1799 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

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NUF6400MNTBG
ON Semiconductor

1 : USD 0.3697
10 : USD 0.3661
25 : USD 0.3511
100 : USD 0.3259
250 : USD 0.3194
500 : USD 0.3194
1000 : USD 0.3194

9 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

NUF6400MNTBG
ON Semiconductor

1 : USD 0.9267
10 : USD 0.7655
30 : USD 0.6869
100 : USD 0.6064
500 : USD 0.5137
1000 : USD 0.4895

     
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Product Category
RoHS - XON
Icon ROHS
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NUF6400MN 6-Channel EMI Filter with Integrated ESD Protection The NUF6400MU is a six channel (CRC) Pistyle EMI filter array with integrated ESD protection. Its typical component values of R = 100 and C = 50 pF deliver a cutoff frequency of 35 MHz and www.onsemi.com stop band attenuation greater than 30 dB from 800 MHz to 2.4 GHz. This performance makes the part ideal for parallel interfaces with MARKING data rates up to 24 Mbps in applications where wireless interference DIAGRAM must be minimized. The specified attenuation range is very effective in minimizing interference from 2G/3G, GPS, Bluetooth and 1 WLAN signals. 12 64 DFN12 The NUF6400MU is available in the lowprofile 12lead 1.35 mm 00 CASE 506AD M x 3.0 mm DFN12 surface mount package. 1 Features/Benefits 6400= Specific Device Code 8.0 kV ESD Protection on each channel (IEC6100042 Level 4, M = Month Contact Discharge) = PbFree Package (Note: Microdot may be in either location) R/C Values of 100 and 50 pF deliver Exceptional S21 Performance Characteristics of 35 MHz f and 30 dB Stop Band Attenuation 3dB from 800 MHz to 2.4 GHz ORDERING INFORMATION Integrated EMI/ESD System Solution in DFN Package Offers Device Package Shipping Exceptional Cost, System Reliability and Space Savings This is a PbFree Device NUF6400MNTBG DFN12 3000 / Tape & Reel (PbFree) Applications For information on tape and reel specifications, EMI Filtering for LCD and Camera Data Lines including part orientation and tape sizes, please EMI Filtering and Protection for I/O Ports and Keypads refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0 5 10 15 R=100 Filter + ESD Filter + ESD n n 20 25 C = 50 pF C = 50 pF d d 30 35 See Table 1 for pin description 40 45 1.0E+6 1.0E+7 1.0E+8 1.0E+9 1.0E+10 FREQUENCY (Hz) Figure 1. Electrical Schematic Figure 2. Typical Insertion Loss Characteristic Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: April, 2019 Rev. 4 NUF6400MN/D S21 (dB)NUF6400MN 1 2 3 4 5 6 GND 12 11 10 9 8 7 (Bottom View) Figure 3. Pin Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Description Filter 1 1 & 12 Filter + ESD Channel 1 Filter 2 2 & 11 Filter + ESD Channel 2 Filter 3 3 & 10 Filter + ESD Channel 3 Filter 4 4 & 9 Filter + ESD Channel 4 Filter 5 5 & 8 Filter + ESD Channel 5 Filter 6 6 & 7 Filter + ESD Channel 6 Ground Pad GND Ground MAXIMUM RATINGS Parameter Symbol Value Unit ESD Discharge IEC6100042 Contact Discharge V 8.0 kV PP DC Power per Package P 100 mW R DC Power per Package P 600 mW T Operating Temperature Range T 40 to 85 C OP Storage Temperature Range T 55 to 150 C STG Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage V 5.0 V RWM Breakdown Voltage V I = 1.0 mA 6.0 7.0 8.0 V BR R Leakage Current I V = 3.0 V 100 nA R RWM Resistance R I = 20 mA 85 100 115 A R Diode Capacitance C V = 2.5 V, f = 1.0 MHz 50 75 pF d R Line Capacitance C V = 2.5 V, f = 1.0 MHz 100 150 pF L R 3 dB CutOff Frequency (Note 1) f Above this frequency, 35 MHz 3dB appreciable attenuation occurs 6 dB CutOff Frequency (Note 1) f Above this frequency, 70 MHz 6dB appreciable attenuation occurs 1. 50 source and 50 load termination. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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